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hal621, HAL629 hall effect sensor family 6251-109-4e edition feb. 5, 2001 6251-504-2ds micr onas micr onas micr onas micr onas micronas
hal62x 2 micronas contents page section title 3 1. introduction 3 1.1. features 3 1.2. family overview 4 1.3. marking code 4 1.3.1. special marking of prototype parts 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 5 2. functional description 6 3. specifications 6 3.1. outline dimensions 6 3.2. dimensions of sensitive area 6 3.3. positions of sensitive areas 7 3.4. absolute maximum ratings 7 3.5. recommended operating conditions 8 3.6. electrical characteristics 9 3.7. magnetic characteristics overview 12 4. type descriptions 12 4.1. hal621 14 4.2. HAL629 16 5. application notes 16 5.1. ambient temperature 16 5.2. start-up behavior 16 5.3. emc 16 6. data sheet history
hal62x 3 micronas hall effect sensor family in cmos technology release notes: revision bars indicate significant changes to the previous edition. 1. introduction the hal 62x family consists of different hall switches produced in cmos technology. all sensors include a temperature-compensated hall plate with active offset compensation, a filter, a comparator, and an open-drain output transistor. the comparator compares the actual magnetic flux through the hall plate (hall voltage) with the fixed reference values (switching points). according- ly, the output transistor is switched on or off. the sensors of this family differ in their magnetic characteristics. all sensors contain an enhanced internal signal proces- sing for very high repeatability requirements of the out- put signal. these sensors are the optimal solution for cam and crank sensor applications. the active offset compensation leads to magnetic pa- rameters which are robust against mechanical stress ef- fects. in addition, the magnetic characteristics are constant in the full supply voltage and temperature range. the sensors are designed for industrial and automotive applications and operate with supply voltages from 4.2 v to 24 v in the ambient temperature range from ?40 c up to 150 c. all sensors are available in the smd-package (sot-89b) and in the leaded version (to-92ua). 1.1. features: ? switching offset compensation at typically 360 khz ? signal processing with chopper stabilized filter ? operates from 4.2 v to 24 v supply voltage ? operates with static magnetic fields and dynamic mag- netic fields up to 15 khz ? overvoltage protection at all pins ? reverse-voltage protection at v dd -pin ? magnetic characteristics are robust against mechani- cal stress effects ? short-circuit protected open-drain output by thermal shut down ? constant switching points over a wide supply voltage range ? ideal sensor for applications in extreme automotive and industrial environments ? emc and esd optimized design 1.2. family overview the types differ according to the magnetic flux density values for the switching points and the mode of switch- ing. type switching behavior sensitivity see page 621 bipolar very high 12 629 unipolar medium 14 note : the hal 629 is the improved successor of the hal 628 with the same magnetic characteristics. bipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not. unipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side.
hal62x 4 micronas 1.3. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. type temperature range a k e hal621 621a 621k 621e HAL629 629a 629k 629e 1.3.1. special marking of prototype parts prototype parts are coded with an underscore beneath the temperature range letter on each ic. they may be used for lab experiments and design-ins but are not in- tended to be used for qualification tests or as production parts. 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). a: t j = ? 40 c to +170 c k: t j = ? 40 c to +140 c e: t j = ? 40 c to +100 c the relationship between ambient temperature (t a ) and junction temperature is explained in section 5.1. on page 16. 1.5. hall sensor package codes type: 62x halxxxpa-t temperature range: a, k, or e package: sf for sot-89b ua for to-92ua type: 629 package: to-92ua temperature range: t j = ? 40 c to +100 c example: HAL629ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: ? ordering codes for hall sensors ? . 1.6. solderability all packages: according to iec68-2-58 during soldering reflow processing and manual rework- ing, a component body temperature of 260 c should not be exceeded. components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 c and 90% relative humidity. out gnd 3 2 1 v dd fig. 1?1: pin configuration
hal62x 5 micronas 2. functional description the hal 62x sensors are monolithic integrated circuits which switch in response to magnetic fields. if a magnet- ic flux perpendicular to the sensitive area is applied to the sensor, the hall plate generates a hall voltage pro- portional to this field. the total voltage which appears at the hall plate is in- fluenced by offset voltages (e. g. caused by mechanical stress). this offset voltage is compensated for by cyclic commutation of the connections for current flow and voltage measurement which makes the switching offset compensation technique possible. therefore, an inter- nal oscillator provides a clock. the output voltage of the switched hall plate contains the hall voltage as a dc or low frequency signal and the offset voltage as an ac sig- nal at the chopper frequency. the following chopper sta- bilized low-pass filter supresses the offset voltage and the output signal is the offset compensated hall voltage. the following comparator block compares this offset compensated hall voltage with the defined switching points. the output transistor is switched on when the magnetic field becomes larger than the operating point b on . it remains in this state as long as the magnetic field does not fall below the release point b off . if the magnet- ic field falls below b off , the transistor is switched off until the magnetic field once again exceeds b on . the built-in hysteresis eliminates oscillation. according to the principle of the circuit, there is a fixed delay time t delay of typical 25 s from crossing the mag- netic thresholds to the switching of the output (see fig. 2 ? 2). the temperature-dependent bias regulates the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. the output is short circuit protected by limiting high cur- rents and by sensing overtemperature. shunt protection devices clamp voltage peaks at the output-pin and v dd - pin together with external series resistors. reverse cur- rent is limited at the v dd -pin by an internal series resistor up to ? 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to ? 15 v. temperature dependent bias switch hysteresis control comparator output v dd 1 out 3 clock hall plate gnd 2 hal62x fig. 2 ? 1: hal62x block diagram short circuit & overvoltage protection reverse voltage & overvoltage protection lp fig. 2 ? 2: timing diagram b b on v o t t b off t delay
hal62x 6 micronas 3. specifications 3.1. outline dimensions fig. 3 ? 1: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm 4.55 1.7 min. 0.25 2.55 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-5-a3/2e y 123 4 0.2 0.15 0.3 2 ? 0.2 sensitive are a top view 1.15 3.2. dimensions of sensitive area 0.12 mm x 0.12 mm 3.3. positions of sensitive areas sot-89b to-92ua x center of the package center of the package y 0.975 mm nominal 1.0 mm nominal fig. 3 ? 2: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm 0.75 0.2 3.1 0.2 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 1.27 1.27 2.54 123 0.42 4.06 0.1 3.05 0.1 0.48 spgs7002-9-a/2e ? 0.4 sensitive area 1.5 note: for all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. an improvement of the to-92ua package with reduced tolerances will be introduced end of 2001.
hal62x 7 micronas 3.4. absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 28 1) v ? v p test voltage for supply 1 ? 24 2) ? v ? i dd reverse supply current 1 ? 50 1) ma i ddz supply current through protection device 1 ? 200 3) 200 3) ma v o output voltage 3 ? 0.3 28 1) v i o continuous output on current 3 ? 50 1) ma i omax peak output on current 3 ? 250 3) ma i oz output current through protection device 3 ? 200 3) 200 3) ma t s storage temperature range 5) ? 65 150 c t j junction temperature range ? 40 ? 40 150 170 4) c 1) as long as t j max is not exceeded 2) with a 220 ? series resistance at pin 1 (see fig. 4 ? 9) 3) t < 2 ms 4) t < 1000h 5) components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 c and 90% relative humidity. stresses beyond those listed in the ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the ? recommended operating conditions/characteristics ? of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 4.2 24 v i o continuous output on current 3 0 20 ma v o output voltage (output switched off) 3 0 24 v
hal62x 8 micronas 3.6. electrical characteristics at t j = ? 40 c to +170 c , v dd = 4.2 v to 24 v, as not otherwise specified in conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 3.6 4.5 5.4 ma t j = 25 c i dd supply current over temperature range 1 2.2 4.5 7.2 ma v ddz overvoltage protection at supply 1 ? 28.5 32.5 v i dd = 25 ma , t j = 25 c, t = 20 ms v oz overvoltage protection at output 3 ? 28 32.5 v i oh = 25 ma , t j = 25 c, t = 20 ms v ol output voltage 3 ? 160 280 mv i ol = 20 ma, t j = 25 c v ol output voltage over temperature range 3 ? 160 400 mv i ol = 20 ma i oh output leakage current 3 ? 0.01 0.1 a output switched off, t j = 25 c, v oh 24 v i oh output leakage current over temperature range 3 ? ? 10 a output switched off, t j 150 c, v oh 24 v f osc internal oscillator chopper frequency ? ? 360 ? khz t j = 25 c t d delay time between switching threshold b and edge of out- put over temperature range ? ? 25 ? s b > b on + 4 mt or b < b off ? 4 mt t en(o) enable time of output after setting of v dd 3 ? 30 70 s v dd = 12 v b > b on + 2 mt or b < b off ? 2 mt t r output rise time 3 ? 0.07 0.4 s v dd = 12 v, r l = 820 ohm, c l = 20 pf t f output fall time 3 ? 0.05 0.4 s v dd = 12 v, r l = 820 ohm, c l = 20 pf r thjsb case sot-89b thermal resistance junction to substrate backside ? ? 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 3 ? 3 r thja case to-92ua thermal resistance junction to soldering point ? ? 150 200 k/w
hal62x 9 micronas 3.7. magnetic characteristics overview at t j = ? 40 c to +170 c, v dd = 4.2 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal 621 ? 40 c ? 1 1.2 4 ? 3 ? 0.7 2 1 1.9 3 mt bipolar 25 c ? 1 1.4 4 ? 3 ? 0.6 2 1 2 3 mt 170 c ? 1 1.6 4 ? 3 ? 0.4 2 1 1.9 3 mt hal 629 ? 40 c 14.5 17.6 20.5 12.5 15.7 20 1 1.9 3 mt unipolar 25 c 14 17 20 12 15 19 1 2 3 mt 170 c 11.5 15.6 19.2 10 13.7 17.2 1 1.9 3 mt note: for detailed descriptions of the individual types, see pages 12 and following. fig. 3 ? 3: recommended pad size sot-89b dimensions in mm 5.0 2.0 2.0 1.0
hal62x 10 micronas ? 15 ? 10 ? 5 0 5 10 15 20 ? 15 ? 10 ? 5 0 5 101520253035 v ma v dd i dd t a = ? 40 c t a = 25 c t a =100 c 25 hal 62x fig. 3 ? 4: typical supply current versus supply voltage t a =170 c 0 1 2 3 4 5 6 7 1234567 v ma v dd i dd hal 62x fig. 3 ? 5: typical supply current versus supply voltage t a = ? 40 c t a = 25 c t a =100 c t a =170 c 0 1 2 3 4 5 6 7 ? 50 0 50 100 150 200 c ma t a i dd v dd = 4.2 v v dd = 12 v v dd = 24 v hal 62x fig. 3 ? 6: typical supply current versus ambient temperature 0 50 100 150 200 250 300 350 400 ? 50 0 50 100 150 200 c mv t a v ol hal 62x fig. 3 ? 7: typical output low voltage versus ambient temperature i o = 20 ma v dd = 4.2 v v dd = 12 v v dd = 24 v
hal62x 11 micronas 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v mv v dd v ol i o = 20 ma hal 62x fig. 3 ? 8: typical output low voltage versus supply voltage t a = ? 40 c t a = 25 c t a =100 c t a =170 c 0 50 100 150 200 250 300 350 400 3.5 4.0 4.5 5.0 5.5 6.0 v mv v dd v ol i o = 20 ma hal 62x fig. 3 ? 9: typical output low voltage versus supply voltage t a = ? 40 c t a = 25 c t a =100 c t a =170 c 15 20 25 30 35 v a v oh i oh t a = ? 40 c t a = 170 c t a = 150 c t a = 100 c t a = 25 c 10 ? 6 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 10 3 10 4 hal 62x fig. 3 ? 10: typical output leakage current versus output voltage ? 50 0 50 100 150 200 c a t a i oh 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 hal 62x fig. 3 ? 11: typical output leakage current versus ambient temperature v o = 24 v
hal621 12 micronas 4. type description 4.1. hal 621 the hal 621 is a very sensitive bipolar switching sensor (see fig. 4 ? 1). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: ? switching type: bipolar ? very high sensitivity ? typical b on : 1.4 mt at room temperature ? typical b off : ? 0.6 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 15 khz applications the hal 621 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: ? applications with large airgap or weak magnets, ? rotating speed measurement, ? crank shaft sensors, ? cam shaft sensors, and ? magnetic encoders. fig. 4 ? 1: definition of magnetic switching points for the hal 621 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = ? 40 c to +170 c, v dd = 4.2 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset b offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c ? 1 1.2 4 ? 3 ? 0.7 2 1 1.9 3 0.2 mt 25 c ? 1 1.4 4 ? 3 ? 0.6 2 1 2 3 0.4 mt 100 c ? 1 1.4 4 ? 3 ? 0.5 2 1 1.9 3 0.4 mt 140 c ? 1 1.5 4 ? 3 ? 0.4 2 1 1.9 3 0.5 mt 170 c ? 1 1.6 4 ? 3 ? 0.4 2 1 1.9 3 0.6 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal621 13 micronas ? 3 ? 2 ? 1 0 1 2 3 0 5 10 15 20 25 v mt v dd b on b off hal 621 b on b off fig. 4 ? 2: typ. magnetic switching points versus supply voltage t a = ? 40 c t a = 25 c t a = 100 c t a = 150 c ? 3 ? 2 ? 1 0 1 2 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 621 b on b off fig. 4 ? 3: typ. magnetic switching points versus supply voltage t a = ? 40 c t a = 25 c t a = 100 c t a = 150 c ? 3 ? 2 ? 1 0 1 2 3 ? 50 0 50 100 150 200 c mt t a b on b off b on b off hal 621 fig. 4 ? 4: typ. magnetic switching points versus temperature v dd = 4.2 v v dd = 12 v v dd = 24 v
HAL629 14 micronas 4.2. hal 629 the hal 629 is an unipolar switching sensor (see fig. 4 ? 5). the hal 629 is the improved successor of the hal628 with the same magnetic characteristics. the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: ? switching type: unipolar ? medium sensitivity ? typical b on : 17 mt at room temperature ? typical b off : 15 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 15 khz ? typical temperature coefficient of magnetic switching points is ? 600 ppm/k applications the hal 629 is the optimal sensor for applications with one magnetic polarity such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0b off b on v ol v o b fig. 4 ? 5: definition of magnetic switching points for the hal 629 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 4.2 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 14.5 17.6 20.5 12.5 15.7 20 1 1.9 3 16.6 mt 25 c 14 17 20 12 15 19 1 2 3 16 mt 100 c 12.7 16.3 19.6 11 14.4 18.1 1 1.9 3 15.4 mt 140 c 12.1 15.9 19.4 10.4 14 17.6 1 1.9 3 15 mt 170 c 11.5 15.6 19.2 10 13.7 17.2 1 1.9 3 14.6 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
HAL629 15 micronas 0 5 10 15 20 0 5 10 15 20 25 v mt v dd b on b off hal 629 b on b off fig. 4 ? 6: typ. magnetic switching points versus supply voltage t a = ? 40 c t a = 25 c t a = 100 c t a = 150 c 0 5 10 15 20 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 629 b on b off fig. 4 ? 7: typ. magnetic switching points versus supply voltage t a = ? 40 c t a = 25 c t a = 100 c t a = 150 c 0 5 10 15 20 ? 50 0 50 100 150 200 c mt t a b on b off b on b off hal 629 fig. 4 ? 8: typ. magnetic switching points versus temperature v dd = 4.2 v v dd = 12 v v dd = 24 v
hal62x 16 micronas 5. application notes 5.1. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + ? t at static conditions, the following equation is valid: ? t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax ? ? t 5.2. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 8). during the initialization time, the output state is not de- fined and the output can toggle. after t en(o) , the output will be low if the applied magnetic field b is above b on . the output will be high if b is below b off . for magnetic fields between b off and b on , the output state of the hal sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic field must be above b onmax , respectively, below b offmin . micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany by systemdruck+verlags-gmbh, freiburg (02/2001) order no. 6251-504-2ds 5.3. emc and esd for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figure 4 ? 9). the series resistor and the capacitor should be placed as closely as pos- sible to the sensor. applications with this arrangement passed the emc tests according to the product standards din 40839. note: the international standard iso 7637 is similar to the used product standard din 40839. please contact micronas for the detailed investigation reports with the emc and esd results. out gnd 3 2 1v dd 4.7 nf v emc v p r v 220 ? r l 1.2 k ? 20 pf fig. 4 ? 9: test circuit for emc investigations 6. data sheet history 1. final data sheet: ? hal 621, hal 629, hall effect sensor family ? , feb. 3, 2000, 6251-504-1ds. first release of the final data sheet. 2. final data sheet: ? hal 621, hal 629, hall effect sensor family ? , feb. 5, 2001, 6251-504-2ds. second release of the final data sheet. major changes: ? position of sensitive area in sot-89b package changed all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirma- tion form; the same applies to orders based on development samples delivered. by this publication, micronas gmbh does not assume re- sponsibility for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh.

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